PART |
Description |
Maker |
M45PE20 M45PE20-VMN6 M45PE20-VMN6G M45PE20-VMN6P M |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪 From old datasheet system 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
M45PE40 M45PE40-VMN6G M45PE40-VMN6P M45PE40-VMN6TG |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
M45PE80-VMW6G M45PE80-VMW6P M45PE80-VMW6TG M45PE80 |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
STMICROELECTRONICS[STMicroelectronics]
|
M25PE40 M25PE40VMN6G M25PE40VMN6P M25PE40VMN6TG M2 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
M45PE10 |
Page-Erasable Serial Flash Memory
|
ST Microelectronics
|
M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
IS93C46D IS93C46D-2ZI IS93C46D-2GI IS93C46D-2GLI I |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 1千位的电可擦除可编程ROM
|
Integrated Silicon Solution, Inc.
|
IS93C46-3 IS93C46-3G IS93C46-3GI IS93C46-3GR IS93C |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 1,024位串行电可擦除可编程ROM 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|